NONVOLATILE MEMORY HAVING CONTACTLESS ARRAY STRUCTURE WHICH CAN RESERVE SUFFICIENT ON CURRENT WITHOUT INCREASING RESISTANCE EVEN IF WIDTH OF BIT LINE IS REDUCED AND CREATION OF HYPERFINE STRUCTURE IS TRIED AND METHOD OF MANUFACTURING NONVOLATILE MEMORY

摘要

Non-volatile memory includes a semiconductor region 1 and the impurity diffusion layer 5 of the second conductivity type of the first conductivity type. Impurity diffusion layer 5 is formed by doping a first impurity of a second conductivity type different from the first conductivity type and a predetermined region of the semiconductor region (1). Impurity diffusion layer 5 is used as a bit line. Impurity diffusion layer (5) is an impurity concentration of substantially has a specific layer or more 1 × 10 ¹⁸ ㎝ ^-3, the previously referred to the diffusion length in the widthwise direction A from the predetermined area and to the thickness d of a specific layer in the depth direction B when, B