SILICON NITRIDE FILM COMPRISING AMORPHOUS SILICON QUANTUM DOT NANOSTRUCTURE EMBEDDED THEREIN AND LIGHT EMITTING DIODE CONTAINING SAME

摘要

The present invention is a silicon light emitting element to be adopted for the thin film on the silicon nitride thin film including the amorphous silicon quantum dots microstructure formed in the silicon nitride-base body and the base body can be manufactured by directly utilizing a conventional silicon semiconductor technology, and , luminous efficiency is excellent, it is also possible emit light in the visible light region, including the short-wavelength region, such as green, and blue.