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Gas sensor, used for monitoring hydrogen, oxygen, hydrocarbons and carbon monoxide concentrations in exhaust gas, has HEMT structure, in which semiconductor layers form heterogeneous layer sequence
Gas sensor, used for monitoring hydrogen, oxygen, hydrocarbons and carbon monoxide concentrations in exhaust gas, has HEMT structure, in which semiconductor layers form heterogeneous layer sequence
Gas sensor comprises a sequence of semiconductor layers (11, 15, 16, 17); a source (12) and a drain (13) for measuring the current; and a gate layer (14) for producing a potential depending on a gas concentration to be measured. The sensor has an HEMT structure, in which the semiconductor layers form a heterogeneous layer sequence of different materials which form a two dimensional electron gas. Preferred Features: The gate layer is made of precious metals, metal oxides and/or zeolites, preferably platinum. The semiconductor layers are formed from a group III nitride heterostructure, preferably AlGaN alternating with GaN. The sensor is formed as a MESFET or MOSFET. An additional insulating layer made of SiO2, AlN, Si3N4 and/or silicon oxynitride. A p-conducting layer made of GaN, AlGaN or AlN is arranged below the gate layer.
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