首页> 外国专利> Determination of the position of defective memory cells in a memory chip so that they can be replaced by redundant memory cells by provision of self test capability and use of a parallel to serial converter with a buffer memory

Determination of the position of defective memory cells in a memory chip so that they can be replaced by redundant memory cells by provision of self test capability and use of a parallel to serial converter with a buffer memory

机译:确定有缺陷的存储单元在存储芯片中的位置,以便通过提供自检功能并使用带有缓冲存储器的并行到串行转换器来替换为冗余存储单元

摘要

An integrated semiconductor memory with a self test mode has a memory cell field (1) with row and column coders (2, 3) for selection of memory cells from the cell field as well as for read-write access, a test device (7) coupled to the memory cell field so that it can execute its function testing and a buffer memory (11) in which row and column data relating to defective memory cells is stored. Memory chip also has a parallel to serial converter (15) connected between the buffer memory and an input-output interface (16) of the memory for output of test data. The invention also relates to a corresponding test system (18) used with a semiconductor memory (17) that has an input-output interface that allows it to connect to a workstation for redundancy calculations.
机译:具有自检模式的集成半导体存储器具有一个带有行和列编码器(2、3)的存储单元字段(1),用于从该单元字段中选择存储单元以及进行读写访问;一个测试设备(7) )耦合到存储单元字段,以便它可以执行其功能测试,并在其中存储与缺陷存储单元有关的行和列数据的缓冲存储器(11)。存储器芯片还具有连接在缓冲存储器和存储器的输入-输出接口(16)之间的并行-串行转换器(15),用于输出测试数据。本发明还涉及与半导体存储器(17)一起使用的相应的测试系统(18),该半导体存储器具有输入输出接口,该输入输出接口允许其连接到工作站以进行冗余计算。

著录项

  • 公开/公告号DE10120255A1

    专利类型

  • 公开/公告日2002-11-07

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AG;

    申请/专利号DE2001120255

  • 发明设计人 DOLL ANDREAS;SCHAFFROTH THILO;

    申请日2001-04-25

  • 分类号G11C29/00;

  • 国家 DE

  • 入库时间 2022-08-22 00:26:58

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