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Semiconducting component has fourth semiconducting region of lower impurity concentration than first region, enclosing first region, arranged between second and third regions
Semiconducting component has fourth semiconducting region of lower impurity concentration than first region, enclosing first region, arranged between second and third regions
The component has a first semiconducting region (14) of a first conductor type, a second region of the same type connected to the first at one end surface, a third region of a second type connected to the other end surface and a fourth region with an inner surface in contact with a lateral bounding surface and a lower impurity concentration than the first region. The fourth region encloses the first and is arranged between the second and third. The component has a first semiconducting region (14) of a first conductor type formed by two opposite end surface and a lateral bounding surface joining them, a second region (12) of the same type connected to the first at one end surface, a third region (13) of a second type connected to the other end surface and a fourth region (15) with an inner surface in contact with the lateral bounding surface and a lower impurity concentration than the first region. The fourth region encloses the first and is arranged between the second and third regions. An Independent claim is included for a method of manufacturing a semiconducting component.
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