oberflu00e4chenpassivierungs method and arrangement for measuring the lifetime of minoritu00e4tsladungstru00e4gern in semiconductors

摘要

the tu00f6ltu00e9shordozu00f3 minority lifetime is a very characteristic parameter to describe afu00e9lvezetu0151 purity of materials and devices.atu00f6ltu00e9shordozu00f3 definition of service life is based on amikrohullu00e1mu00fa refleksziu00f3mu00e9ru00e9sen is one of the fundamental way.at the same time, the measurement of material properties of atu00e9rfogati determination of the surface and, therefore, the vizsgu00e1latsoru00e1n processes must be eliminated, i.e., the felu00fcletetpasszivu00e1lni.meanwhile, should avoid as far as possible mintu00e1banlu00e9trehozott permanent changes.the present invention concerns a procedure and implementing that olyanpasszivu00e1lu00e1si arrangement.the measurement of the lifetime of fu00e9lvezetu0151kszabad tu00f6ltu00e9shordozu00f3 which effectively eliminates the interference felu00fcletifolyamatokat ito the surface of semiconductor anyagtu00e9rfogati and does not create any substantive maradandu00f3vu00e1ltozu00e1st. oh