NNN/PPP LOGICAL ORGANISATIONS WITH ULTRANIEDRIC SUPPLY PRODUCT

摘要

Transistors have source, drain and channel regions all of the same conductivity type. The channel region is very thin, not more than about 500 ANGSTROM and preferably about 300 ANGSTROM or even 100 ANGSTROM in thickness. A very thin oxide layer having a thickness of much less than about 100 ANGSTROM , such as 20 ANGSTROM and preferably about 5 to about 10 ANGSTROM , isolates a gate electrode from the channel region. When operated at temperatures at or below 150 DEG K, such as 77 DEG K, very low threshold voltages, well below 25 millivolts, are achieved. Gigahertz speed complementary MOS transistors, formed by adjacent NNN and PPP devices exhibit power-delay products of about 1E-16 joules operating at supply voltages on order 100 millivolts or lower, making this technology of particular interest for multi-gigahertz processing rates at very low power.