Brief description of embodiments of an electronic component has a source, drain and gate self - allignes, in the architecture damask

• 1. 一种平面功率器件中栅极场板与源极和漏极的自对准方法 [P] . 中国专利： CN107301952B . 2019.12.27
• 2. 一种平面功率器件中栅极场板与源极和漏极的自对准方法 [P] . 中国专利： CN107301952A . 2017-10-27
• 3. The method of making an electronic component with self-aligned source, drain and gate in damask - technology [P] . 德国专利： DE60122145T2 . 2007-07-05

  机译： 用锦缎自对准源，漏和栅的电子元件的制造方法-技术

• 4. Fabrication of an electronic component with self-aligned source drain and gate includes self-aligned siliciding of a source and drain formed on either side of a dummy gate [P] . 法国专利： FR2810157A1 . 2001-12-14

  机译： 具有自对准的源极漏极和栅极的电子组件的制造包括在伪栅极的任一侧上形成的源极和漏极的自对准硅化

• 5. Method of forming an electronic device formed by a source-drain-gate is self-aligned in damascene architecture [P] . 日本专利： JP2003536259A . 2003-12-02

  机译： 在镶嵌结构中自对准形成由源极-漏极门形成的电子器件的方法

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• 3. Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture [O] . Hongliang Lu, Bin Lu, Yuming Zhang, 2019
• 4. Towards Flexible All-Carbon Electronics: Flexible Organic Field- Effect Transistors and Inverter Circuits Using Solution-Processed All-Graphene Source/Drain/Gate Electrodes [O] . Nano Res, Yongsheng Chen, Yanfei Xu, 2014
• 5. Estimation of local and regional components of drain - flow from an irrigated field [R] . Eching, S. O. , Hopmans, J. W. , Wallender, W. W. , 1995

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