VOLTAGE SHIFT DIODE CONDUCTED IN INTEGRATED MONOLITHIC MICROWAVE TECHNOLOGY, PARTICULARLY FOR A VERY WIDE BAND MICROPHONE OPTOELECTRONIC TRANSMITTER

摘要

The interface device comprises a voltage offset diode (DD) produced in monolithic microwave integrated technology, mounted between the output (S) of the upstream circuit (16) and the input of the downstream circuit (18). The characteristic of the offset diode (DD) is chosen so that the bias voltage (VD) of the upstream circuit (16) is offset by an offset corresponding substantially to the difference between the bias voltages (VD and VL ) upstream (16) and downstream (8) circuits. The bias current of the downstream circuit is relatively high compared to the threshold current of the shift diode.