Production method and silicon amp; germanium carbon ternary mixed crystal membrane null of silicon amp; germanium carbon ternary mixed crystal

摘要

PROBLEM TO BE SOLVED: To provide a three element mixed crystal film of silicon/germanium/ carbon in which concentration of carbon can be controlled over a wide range and homogeneity and high quality are ensured over the entire region in the film by suppressing deposition of silicon carbide.;SOLUTION: A two element mixed crystal underlying layer 12 of silicon/ germanium having a thickness not thinner than that of one atomic layer is formed on a silicon substrate 11, a three element mixed crystal layer 13 of silicon/germanium/carbon is formed thereon and a three element mixed crystal film of silicon/germanium/carbon is formed utilizing preferential bonding of silicon atom and carbon atom and substitution of germanium atom and carbon atom.;COPYRIGHT: (C)2002,JPO