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Impurity diffusion suppression manner to semiconductor and impurity choice diffusion manner to semiconductor, production manner null of semiconductor equipment and
Impurity diffusion suppression manner to semiconductor and impurity choice diffusion manner to semiconductor, production manner null of semiconductor equipment and
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机译:对半导体的杂质扩散抑制方式和对半导体的杂质选择扩散方式,半导体设备的生产方式无效
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摘要
PROBLEM TO BE SOLVED: To suppress the diffusion of impurity boron contained in a BSG film, by implanting nitrogen into the BORO-SILICATE GLASS(BSG) film of an insulating film containing boron as impurity. SOLUTION: In the manufacture process of a semiconductor device, a BSG film 24 is stacked all over the surface of a semiconductor substrate 9, with boron as impurity This BSG film 24 is grown in condition that boron is contained in gas by, for example, CVD art. A resist pattern 25 is made to cover a PMOS transistor formation area, and N2 + is implanted, or N+ ions are implanted into the BSG film 24. Hereby, as to the section where doping of nitrogen is performed within the BSG film 24, enough effect of suppressing the diffusion of impurities can be obtained. That is, the method of suppressing diffusion of impurities into the semiconductor is one which implants nitrogen into the BSG film being the insulating film containing boron as impurity.
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