POWER ELEMENT DEVICE WITH MOUNTING ELECTRODE BOARD, IGBT THEREWITH, POWER ELEMENT MODULE, POWER ELEMENT WAFER, METHOD FOR MANUFACTURING POWER ELEMENT DEVICE WITH MOUNTING ELECTRODE BOARD, AND METHOD FOR MANUFACTURING POWER ELEMENT MODULE

摘要

PROBLEM TO BE SOLVED: To provide a power element device capable of preventing elements from breakdown, employing thicker bonding wires, and simplifying the wire bonding process, though simplified in structure.;SOLUTION: The power element device comprises an IGBT 53 with a mounting electrode board and a housing 5 accommodating the IGBT 53. An IGBT chip 3 has a plurality of divided emitter electrodes and, corresponding thereto, a plurality of soldered layers 55 are provided. On the soldered layers 55, a mounting electrode board 57 is positioned and connected by wires 59 to the emitter electrode leadout section 11 of the housing 5.;COPYRIGHT: (C)2003,JPO