A method for producing a strained quantum well crystal

摘要

PROBLEM TO BE SOLVED: To provide a strained-quantum well semiconductor laser, in which an oscillation wavelength has small temperature dependence and injected current dependence by manufacturing a strained-quantum well having an ordering. ;SOLUTION: On a semiconductor single crystal substrate 1, a first optical waveguide layer 2, a multiple quantum well 5 having strained-well layers 3 and blocking layers 4, and a second optical waveguide layer 6 are allowed to glow. The stained-well layers grow at 600°C or less, so that the blocking layers perform an ordering. This arrangement makes it possible to achieve a strained-quantum well semiconductor laser, in which an oscillation wavelength has small temperature dependence and injected current dependence.;COPYRIGHT: (C)1999,JPO