SPUTTERING TARGET FOR FORMING COPPER ALLOY WIRING FILM AND COPPER ALLOY WIRING FILM LITTLE AFFECTED BY HEAT AND FORMED BY USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a sputtering target for forming copper alloy wiring film that is used at a time of forming an internal wiring film of a semiconductor device, such as LSI, etc., and to provide the internal wiring film for wafer that is formed by using the target and is little affected by heat.;SOLUTION: The sputtering target for forming the copper alloy wiring film is made of a copper alloy having a composition containing either one or both of Zn and Ag in an amount of 0.1-2 at.%; one, two, or more kinds of metals selected from among V, Cr, Nb, Mo, Ta, and W in an amount of 0.1-2 at.%; and the balance copper and inevitable impurities. The internal wiring film for wafer is formed by using this target.;COPYRIGHT: (C)2003,JPO