首页> 外国专利> TOOL FOR ANALYZING IMPURITY IN SEMICONDUCTOR WAFER, AND IMPURITY ANALYSIS METHOD OF SEMICONDUCTOR WAFER USING THE TOOL

TOOL FOR ANALYZING IMPURITY IN SEMICONDUCTOR WAFER, AND IMPURITY ANALYSIS METHOD OF SEMICONDUCTOR WAFER USING THE TOOL

机译:用于分析半导体晶片中杂质的工具,以及使用该工具分析半导体晶片中杂质的方法

摘要

PPROBLEM TO BE SOLVED: To provide a technique for accurately evaluating impurities regarding one portion on the surface of a semiconductor wafer. PSOLUTION: The impurity analysis tool 1 is used for analyzing impurities adhering to a semiconductor wafer and comprises a body 2 where the semiconductor wafer is accommodated, and a lid section 3 that is integrated with the body. The lid section has an opening 5. When the body is integrated with the lid section, a semiconductor wafer W that is accommodated in the body is retained in contact with the lid section, and at the same time only a section 8 that is exposed through the opening can be etched. The semiconductor wafer is retained in contact by the tool, only a portion that is exposed through the opening of the lid section is etched by a chemical liquid, and a recovered chemical liquid is analyzed by using an analyzing apparatus. PCOPYRIGHT: (C)2003,JPO
机译:

要解决的问题:提供一种用于准确评估与半导体晶片表面上的一部分有关的杂质的技术。

解决方案:杂质分析工具1用于分析粘附到半导体晶片上的杂质,并包括容纳半导体晶片的主体2和与该主体集成在一起的盖部3。盖部具有开口5。当主体与盖部一体化时,容纳在主体中的半导体晶片W保持与盖部接触,并且同时仅通过其露出的部8。可以蚀刻开口。半导体晶片通过工具保持接触,仅通过盖部的开口暴露的部分被化学液体蚀刻,并且回收的化学液体通过使用分析装置进行分析。

版权:(C)2003,日本特许厅

著录项

  • 公开/公告号JP2003185543A

    专利类型

  • 公开/公告日2003-07-03

    原文格式PDF

  • 申请/专利权人 SHIN ETSU HANDOTAI CO LTD;

    申请/专利号JP20010384284

  • 发明设计人 ARAKI KENJI;

    申请日2001-12-18

  • 分类号G01N1/28;G01N21/31;G01N27/62;H01L21/66;H01L21/68;

  • 国家 JP

  • 入库时间 2022-08-22 00:15:05

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