Method for forming shallow retrograde wells in semiconductor device and shallow retrograde wells formed thereby

摘要

A well ion-implantation process using an energy level equal to or lower than 400 KeV, instead of an energy level equal to or greater than 800 KeV, forms a well which functions as both a punchthrough stopper and a channel stopper and has few differences as compared to that of a device manufactured according to a conventional method, and, therefore, facilitates to simplify processes and enhance production without lowering the operational characteristics and reliability of a semiconductor device.