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Solution to black diamond film delamination problem
Solution to black diamond film delamination problem
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机译:解决黑钻石膜分层问题
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摘要
Low k dielectrics such as black diamond have a tendency to delaminate from the edges of a silicon wafer, causing multiple problems, including blinding of the alignment mark. This problem has been overcome by inserting a layer of silicon nitride between the low k layer and the substrate. A key requirement is that said layer of silicon nitride be under substantial compressive stress (at least 5×109 dynes/cm2). In the case of a layer of black diamond, on which material the invention is particularly focused, a nucleating layer is also inserted between the silicon nitride and the black diamond. A process for laying down the required layers is described together with an example of applying the invention to a dual damascene structure.
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机译:低k电介质(例如黑金刚石)具有从硅片边缘剥离的趋势,从而导致多种问题,包括对准标记的遮盖。通过在低k层和衬底之间插入一层氮化硅克服了这个问题。一个关键的要求是,所述氮化硅层要承受很大的压缩应力(至少5×10 9 Sup>达因/ cm 2 Sup>)。在黑金刚石层的情况下,将本发明特别关注在该材料上,成核层也插入在氮化硅和黑金刚石之间。与将本发明应用于双镶嵌结构的示例一起描述了铺设所需层的方法。
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