Method for preventing etching-induced damage to a metal oxide film by patterning the film after a nucleation anneal but while still amorphous and then thermally annealing to crystallize

摘要

After an SBT layer is precipitated onto a substrate, the SBT layer is structured as a still amorphous layer. Only subsequently is it subjected to a crystallization process. Layers produced in this manner have a relatively high degree of dielectric strength and have no stoichiometric deviations on the etched edges.