Method of obtaining a performance parameter for an ion implanter and an ion implanter employing the method

摘要

A performance parameter for an ion implanter is obtained by monitoring vacuum pressure in a vacuum chamber of the implanter to identify pulses of said pressure caused by outgassing from the wafer surfaces during respective scans or groups of scans of the wafer through the ion beam. The pressure values are integrated during the identified pulses to provide a series of pulse pressure integral values which provide the performance parameter. An increase in the integral values indicates deterioration in vacuum system performance.