Method of fabricating a whispering gallery mode resonator using CVD EPI and a bonded silicon wafer

摘要

The starting material for this process is a bonded silicon wafer with the appropriate thickness of separating silicon oxide and the appropriate thickness of superficial silicon. The thicknesses are chosen to give the desired operating characteristics of the device. First a masking oxide is formed and holes are opened in the masking oxide having the diameter needed for the pedestal. The holes are then opened down to the separating silicon oxide. If KOH is used then the etch will stop at the oxide automatically. After the silicon etch the oxide is opened to the silicon substrate.