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HIGH-POWERED SEMICONDUCTOR LASER ARRAY APPARATUS IN WHICH THE WAVELENGTH AND PHASE OF LASER BEAMS FROM SEMICONDUCTOR LASER UNITS ABOVE CAN BE MATCHED THOSE OF LASER BEAMS FROM SEMICONDUCTOR LASER UNITS BELOW, MANUFACTURING METHOD OF THE SEMICONDUCTOR LASER ARRAY APPARATUS AND MULTI-WAVELENGTH LASER EMITTING APPARATUS USING THE SEMICONDUCTOR LASER ARRAY APPARATUSES
HIGH-POWERED SEMICONDUCTOR LASER ARRAY APPARATUS IN WHICH THE WAVELENGTH AND PHASE OF LASER BEAMS FROM SEMICONDUCTOR LASER UNITS ABOVE CAN BE MATCHED THOSE OF LASER BEAMS FROM SEMICONDUCTOR LASER UNITS BELOW, MANUFACTURING METHOD OF THE SEMICONDUCTOR LASER ARRAY APPARATUS AND MULTI-WAVELENGTH LASER EMITTING APPARATUS USING THE SEMICONDUCTOR LASER ARRAY APPARATUSES
A semiconductor laser array apparatus, comprising: a first laser array structure which includes a plurality of first laser oscillation units arranged side by side at an interval, and a first current blocking material filling a space between each pair of adjacent laser oscillation units and, a second laser array structure which includes a plurality of second laser array structure arranged side by side at an interval and a second current blocking material filling a space between each pair of adjacent second laser oscillation units. Here, laser beams from the activated first and second laser array structures leak to the outside of those laser array structure so as to form first and second distribution regions of the laser beams respectively, and the first and second laser array structures are close to each other so that the first and second distribution regions contact or overlap with each other.
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