Method of crystallizing amorphous silicon thin film and method of fabricating polysilicon thin film transistor using the crystallization method

摘要

A method of crystallizing an amorphous silicon thin film is disclosed including the steps of preparing a substrate having a conductive layer, depositing an amorphous silicon thin film on the substrate, forming a metal thin film selectively overlying the amorphous silicon thin film, and performing a heat treatment and application of electric field to the metal thin film; and a method of fabricating a thin film transistor including the steps of preparing a substrate having a conductive layer, forming an active layer of amorphous silicon on the substrate, forming a gate insulating layer and a gate electrode on the active layer, doping the active layer with a first conductivity type impurity using the gate electrode as a mask, forming a metal thin film on the entire surface of the substrate including the active layer doped with the impurity, and performing a heat treatment and applying electric field to the substrate including the metal thin film.