Process for crystallizing amorphous silicon and its application - fabricating method of thin film transistor and TFT-LCD

摘要

PURPOSE: A poly crystallizing method, and a thin film transistor fabricating method and a liquid crystal display fabricating method using the method are provided to maximize the crystallization of amorphous silicon by dehydrogenating the amorphous silicon before forming a metal thin film. CONSTITUTION: A poly crystallizing method includes the steps of forming a buffer layer(202) on an insulating substrate(201), forming an amorphous silicon layer(203) on the buffer layer, dehydrogenating the amorphous silicon layer by carrying out heat processing for the substrate at 400C for 1 hour, forming a metal thin film layer on the amorphous silicon layer, and crystallizing the amorphous silicon layer by carrying out heat processing of the substrate simultaneously with applying electric fields to the metal thin film layer.