NUMERICAL SIMULATOR FOR INTERCONNECT ON SEMICONDUCTOR AND ANALYZING METHOD

摘要

PURPOSE: A device and a method for analyzing a multi-layer metal wiring value of a semiconductor are provided to correctly calculate an electromagnetic effect generated by the multi-layer metal wiring in a semiconductor IC operating at a high frequency band. CONSTITUTION: A 3-D(Dimensional) semiconductor metal wiring structure is formed by using a layout editor(S300). The structure is divided into spatial x, y and z direction in smaller space than a minimum line width(S301). Time increment is calculated from the spatial increment of the x, y and z direction(S302). The components of an electric field and a magnetic field for the x, y and z direction at all node points in a calculation area are calculated by applying the material information and the spatial and time increment to the Maxwell rotation equation(S303). The electric and the magnetic filed component after a next time step are calculated by using the Maxwell rotation equation again(S304). A wave advancing to the outside of the calculation area is disappeared by using a boundary condition and an absorption condition(S305). If the components are decided, a computer automatically decides the completion of the calculation until a set time(S306).