Hydrogen Chamber Secuoxane Flowable Oxides as Interlevel Dielectric Devices for ULSI Circuits of 0.5 and Less Than 0.5 Microns

摘要

The method of forming a planar dielectric layer on an interconnect pattern has fewer processing steps and lower dielectric constant than that obtained in the prior art. This method has an electrical interconnection pattern 33 and provides a substrate 35, preferably forming a first dielectric layer 37 on the interconnection pattern with a plasma generating TEOS oxide, preferably a hydrogen silqueu From the inorganic silicon containing mixture which is oxane, a porous second layer 41 of silicon-containing dielectric material 43 having a low dielectric constant different from the first layer on the first dielectric layer is formed, and preferably a second layer on the second dielectric layer with plasma generating TEOS oxide Forming a third dielectric layer different from the layer. Forming the second layer comprises depositing an inorganic silicon containing mixture that can be thermally converted into silicon oxide on the first layer, placing the final structure in an environment free of pure nitrogen and moisture at atmospheric or subatmospheric pressure Heating the silicon containing mixture at a temperature from about 375 ° C. to about 425 ° C. for about 30 to about 90 minutes to change the silicon containing mixture to silicon oxide.