Ion Beam Assisted Evaporator and evaporating process thereof

摘要

PURPOSE: An apparatus for depositing an indium-tin-oxide(ITO) thin film by an ion beam evaporation process is provided to greatly reduce manufacturing cost and to form the ITO thin film having low resistance and high transmittance as compared with a conventional sputtering method, by using an ion beam evaporation method. CONSTITUTION: A substrate is mounted inside a chamber of an apparatus for depositing an indium-tin-oxide(ITO) thin film. An e-beam evaporator evaporates the ITO thin film on the substrate, separated from the substrate. At least one ion source gun generates ion source for improving the characteristic of the ITO thin film, installed in the periphery of the e-beam evaporator.