Gunn effect semiconducting component has base collector space charging zone whose extent is controlled by applied d.c. voltage and current and in which Gunn effect occurs

摘要

The device has thick collector, a base collector space charging zone whose extent is controlled by the applied d.c. voltage and current and in which the Gunn effect occurs, whereby the oscillation frequency of the occurring oscillations are controlled by the adjustable working point so that a voltage or current controlled oscillator is produced.