Floating gate memory cell for non-volatile information storage, has source/drain configuration, having two source/drain regions permitting access of all floating gates through two common source/drain regions

摘要

The memory cell has a source/drain configuration accessing a floating gate configuration, having floating gates each for storing information. A control gate configuration having multiple control gates controls the access to each floating gate. The source/drain configuration having two source/drain regions permits the access of all floating gates through two common source/drain regions. An Independent claim is also included for the method for fabricating floating gate configuration.