MOS transistor load current determination method, in which the transistor temperature is measured and used to calculate a switch-on resistance, based on a reference resistance value, thus enabling load current determination

摘要

Method for determining the load current through a semiconductor element (T) has the following steps: detection of the internal temperature (T2) of the element and determination of the switch-on resistance (Ron(T2)) based on the measured temperature and a switch-on reference resistance (Ron(T1)) determined at a reference temperature. Measurement of the component leakage voltage (Uds) and determination of the load current from the leakage voltage and calculated switch-on resistance. The invention also relates to a corresponding circuit arrangement with an analysis circuit (AS).