首页> 外国专利> SIDE-BONDING METHOD FOR FLIP CHIP SYSTEM IN SEMICONDUCTOR DEVICE, MEMS DEVICE PACKAGE AND PACKAGE METHOD USING THE SAME

SIDE-BONDING METHOD FOR FLIP CHIP SYSTEM IN SEMICONDUCTOR DEVICE, MEMS DEVICE PACKAGE AND PACKAGE METHOD USING THE SAME

机译:半导体器件倒装芯片系统的侧键合方法,MEMS器件封装以及使用该封装的封装方法

摘要

PROBLEM TO BE SOLVED: To provide a bonding method of flip chip system in a semiconductor device, which is not influenced by the surface state of a substrate.;SOLUTION: This bonding method includes a step (a) to form a first UBM along the bonding line on a lower substrate in which a semiconductor element is provided, a step (b) to apply solder plating onto the first UBM, a step (c) to form a trench at a position corresponding to solder plating in the bonding face of an upper substrate to be bonded on the lower substrate and form a second UBM on the trench, a step (d) to joint the upper and lower substrates by inserting solder into the trench, and a step (e) to joint the upper and lower substrates while melting solder toward the side of the trench by heating the jointed upper and lower substrates to a temperature higher than the melting temperature.;COPYRIGHT: (C)2004,JPO
机译:解决的问题:提供一种半导体器件中倒装芯片系统的键合方法,该方法不受衬底表面状态的影响。解决方案:该键合方法包括步骤(a)沿着衬底形成第一UBM在设置有半导体元件的下基板上的键合线,将焊料镀覆施加到第一UBM上的步骤(b),步骤(c)以在与基板的键合面相对应的焊料镀覆的位置处形成沟槽。待结合在下基板上并在沟槽上形成第二UBM的上基板,通过将焊料插入沟槽将上,下基板接合的步骤(d)和将上,下基板接合的步骤(e)通过将接合的上下基板加热到高于熔化温度的温度将焊料熔化到沟槽的侧面。;版权所有(C)2004,JPO

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