首页> 外国专利> Process for doping silver halide emulsion grains with Group 8 transition metal shallow electron trapping dopant, selenium dopant, and gallium dopant, and doped silver halide emulsion

Process for doping silver halide emulsion grains with Group 8 transition metal shallow electron trapping dopant, selenium dopant, and gallium dopant, and doped silver halide emulsion

机译:用第8族过渡金属浅电子俘获掺杂剂,硒掺杂剂和镓掺杂剂以及掺杂的卤化银乳剂掺杂卤化银乳剂晶粒的方法

摘要

A process for incorporating dopants in a silver halide emulsion is described comprising precipitating silver halide emulsion grains in a reaction vessel, wherein at least one gallium dopant, at least one Group 8 metal dopant, and at least one selenium dopant are introduced into the reaction vessel during precipitation of the silver halide grains; where the gallium dopant is introduced in the form of a gallium halide coordination complex of the formula (I):; PTEXTPDAT[R/PDATHILSBPDATx/PDAT/SB/HILPDATNH/PDATHILSBPDATy/PDAT/SB/HILPDAT]/PDATHILSBPDAT3/PDAT/SB/HILPDATGaX/PDATHILSBPDAT6/PDAT/SB/HIL/PTEXT ;wherein R represents a lower alkyl group of from 1-3 carbon atoms; X is Cl, Br, or I; and x is from 1-3, y is from 1-3, and xy4; and the Group 8 metal dopant satisfies the formula (II):; PTEXTPDAT[ML/PDATHILSBPDAT6/PDAT/SB/HILPDAT]/PDATHILSPPDATn/PDAT/SP/HIL/PTEXT ;wherein n is 2, 3 or 4; M is a Fe2, Ru2, or Os2 ion; and L6 represents bridging ligands which can be independently selected, provided that at least four of the ligands are anionic ligands, and at least one of the ligands is a cyano ligand or a ligand more electronegative than a cyano ligand. In another embodiment, this invention is directed towards silver halide emulsions formed by such process. In a still further aspect, this invention is directed towards a photographic element comprised of a support, and a silver halide emulsion layer coated on the support comprised of an emulsion obtained by the process of the invention.
机译:描述了将掺杂剂掺入卤化银乳剂中的方法,该方法包括在反应容器中沉淀卤化银乳剂颗粒,其中将至少一种镓掺杂剂,至少一种8族金属掺杂剂和至少一种硒掺杂剂引入反应容器中。在卤化银晶粒沉淀期间;其中以式(I)的卤化镓配位络合物的形式引入镓掺杂剂: <数学> <![CDATA [ &lsqb; R x NH y &rsqb; 3 GaX 6 ]]> ;其中R代表1-3个碳原子的低级烷基; X为Cl,Br或I; x是1-3,y是1-3,xy4;第8族金属掺杂剂满足式(II): <数学> <![CDATA [ &lsqb; ML 6 &rsqb; n ]]> ;其中n为2、3或4; M是Fe 2 ,Ru 2 或Os 2 离子;和L 6 表示可以独立选择的桥联配体,条件是至少四个配体是阴离子配体,并且至少一个配体是氰基配体或比氰基带负电的配体配体。在另一个实施方案中,本发明涉及通过这种方法形成的卤化银乳剂。在另一方面,本发明涉及一种由载体构成的照相元件,以及涂覆在载体上的卤化银乳剂层,所述卤化银乳剂层由通过本发明的方法获得的乳剂构成。

著录项

  • 公开/公告号US6740483B1

    专利类型

  • 公开/公告日2004-05-25

    原文格式PDF

  • 申请/专利权人 EASTMAN KODAK COMPANY;

    申请/专利号US20030426264

  • 发明设计人 TOMMIE L. ROYSTER JR.;

    申请日2003-04-30

  • 分类号G03C10/05;G03C14/94;

  • 国家 US

  • 入库时间 2022-08-21 23:16:26

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