Magnetic devices with a ferromagnetic layer having perpendicular magnetic anisotropy and an antiferromagnetic layer for perpendicularly exchange biasing the ferromagnetic layer

摘要

The invention is a magnetic device that includes a ferromagnetic/antiferromagnetic (F/AF) structure wherein the ferromagnetic layer is perpendicularly exchange biased by the antiferromagnetic layer. The invention has application to perpendicular magnetic recording disks and magnetic tunnel junction devices used as read heads for disk drives and memory cells in magnetic memory arrays.