A METHOD FOR OBTAINING CADMIUM TELLURIDE MONOCRYSTALS WITH CONDUCTIVITY OF N- AND P-TYPE

摘要

A method for obtaining cadmium telluride monocrystals with conductivity of n- and p-type consists in use of pure cadmium and pure tellurium being synthesized in three-section furnace as original substances. One section of the furnace is used for cadmium evaporation; the second one is used for tellurium evaporation. The middle section represents reaction space where vapors are mixed, reacted and condensed, forming crystals of compounds being subjected to two-temperature annealing in the vapors of components. Annealing temperature is 800-1200 è, partial pressure of cadmium vapor is changed in the limits of 1-104 Pa, and annealing time is of 22-28 hours.