首页> 外国专利> PROCESS AND APPARATUS FOR PULSED DC MAGNETRON REACTIVE SPUTTERING OF THIN FILM COATINGS ON LARGE SUBSTRATES USING SMALLER SPUTTER CATHODES

PROCESS AND APPARATUS FOR PULSED DC MAGNETRON REACTIVE SPUTTERING OF THIN FILM COATINGS ON LARGE SUBSTRATES USING SMALLER SPUTTER CATHODES

机译:用较小的溅射阴极对大衬底上的薄膜磁控脉冲溅射直流磁控反应溅射的方法和装置

摘要

A pulsed dc reactive magnetron sputter deposition apparatus and process enables large substrates to be coated with one ore more sputter cathodes having a size smaller than the substrate. The reactive sputtering is provided over a long throw distance between the sputter cathode and the substrate, and approximating a long mean free path. The substrate to be coated due to the low pressures enabled by the use of pulsed DC magnetrons. The low pressures, e.g. less than 1 mTorr, allows for a long throw distance which approximates the long the mean free path. And a pulsed dc power source provides sufficient energies to emit sputtered target particles across the long throw distance to the substrate substantially without collision, to produce optical coating with optics grade qualities.
机译:脉冲直流无功磁控溅射沉积设备和工艺使大型基板能够被一个或多个尺寸小于基板的溅射阴极涂覆。在溅射阴极和衬底之间的长投掷距离上提供反应性溅射,并且近似长的平均自由程。由于使用脉冲直流磁控管可实现低压,因此需要涂覆的基材。低压例如小于1 mTorr,则允许较长的投掷距离,该距离近似于平均自由行程的长度。脉冲直流电源提供足够的能量,以在长距离内向基板发射溅射的目标粒子,而不会发生碰撞,从而产生具有光学级质量的光学涂层。

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