首页> 外国专利> SEMICONDUCTOR DEVICE CAPABLE OF PLANNING DIMINUTION, COMPOSED OF MAIN SURFACE, FUSE FORMING REGION, AND BLOCKING LAYER HAVING RECESSED PARTS

SEMICONDUCTOR DEVICE CAPABLE OF PLANNING DIMINUTION, COMPOSED OF MAIN SURFACE, FUSE FORMING REGION, AND BLOCKING LAYER HAVING RECESSED PARTS

机译:具有规划尺寸的半导体器件,由主要表面,保险丝形成区域和具有凹入部分的阻隔层组成

摘要

PURPOSE: A semiconductor device is provided to reduce a reflection ray directed from a reflective surface to a region located apart from a fuse forming region in a horizontal direction by forming the reflective surface having recessed parts. CONSTITUTION: A semiconductor substrate(2) includes a main surface, a fuse forming region, and a blocking layer(12a). The fuse forming region is formed on the main surface and includes a plurality of fuses(16a) buried therein. The blocking layer is formed between the fuse forming region and the semiconductor substrate. The blocking layer prevents a laser ray from proceeding to a lower portion by reflecting the laser ray which was illuminated when the fuse is cut. The blocking layer includes a reflective surface which has a shape of recessed parts in order to reflect the laser ray. The blocking layer is overlapped with a substantially whole region of the fuse forming region in a planar view.
机译:用途:提供一种半导体器件,以通过形成具有凹部的反射表面来减小从反射表面指向水平方向上与熔丝形成区域分开的区域的反射射线。构成:半导体衬底(2)包括主表面,熔丝形成区域和阻挡层(12a)。熔丝形成区域形成在主表面上,并且包括埋在其中的多个熔丝(16a)。阻挡层形成在熔丝形成区域和半导体衬底之间。阻挡层通过反射在切断保险丝时照射的激光来防止激光行进到下部。阻挡层包括具有凹入部分形状的反射表面,以反射激光。在平面图中,阻挡层与熔丝形成区域的基本上整个区域重叠。

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