Formation of Polycrystalline Silicon Thin Film using Field Aided Rapided Thermal AnnealingFARTA

摘要

PURPOSE: A method for manufacturing a polycrystalline silicon thin film using FARTA(field aided rapid thermal annealing) is provided to be capable of forming an aiming shape and size crystalline silicon layer at a low temperature, reducing process time, and improving response speed and resolution. CONSTITUTION: An amorphous silicon thin film is crystallized by applying an electric field of 5-1000 V/cm and simultaneously carrying out heat treatment at the temperature of 150-500 C. Preferably, an RTA process is periodically carried out per 50-200 seconds under the heat treatment. At this time, the RTA process is performed at the temperature of 500-800 C for 1-30 seconds. Preferably, a metal deposition layer is formed on the amorphous silicon thin film for forming a pattern.