PYROCHLORE CONDUCTIVE OXIDE SUITABLE FOR MOCVD(METAL ORGANIC CHEMICAL VAPOR DEPOSITION) OR ALD(ATOMIC LAYER DEPOSITION) AND THIN FILM AND CAPACITOR USING THE OXIDE

摘要

PURPOSE: A conductive oxide having a pyrochlore structure and an oxide thin film and a capacitor containing the oxide are provided, to obtain a precursor suitable for MOCVD(metal organic chemical vapor deposition) or ALD(atomic layer deposition) for making a 3D capacitor. CONSTITUTION: The conductive oxide has a pyrochlore structure and is represented by Bi2(Ru(2-x), Six)O(7-y) or Pb2(Ru(2-x), Six)O(7-y), wherein 0x2 and 0y1. The capacitor comprises a bottom electrode; a dielectric layer formed on the bottom electrode; and an upper electrode formed on the dielectric layer, wherein at least one of the bottom electrode and the upper electrode is formed by using the conductive oxide. Preferably the dielectric layer has a pyrochlore crystal structure and is formed by using a bismuth titanium silicon oxide represented by Bi2(Ti(2-x), Six)O(7-y), wherein 0.8x1.3 and -1y1.