METHOD FOR FORMING BARRIER METAL LAYER OF SEMICONDUCTOR DEVICE TO EMBODY THERMAL STABILITY AND PREVENT CONTACT RESISTANCE FROM BEING INCREASED BY HIGH TEMPERATURE HEAT TREATMENT

摘要

PURPOSE: A method for forming a barrier metal layer of a semiconductor device is provided to embody thermal stability and prevent contact resistance from being increased by a high temperature heat treatment by forming a cobalt silicide layer made of a barrier metal layer in contact with a lower conductive layer. CONSTITUTION: A titanium layer(23) in contact with a semiconductor substrate(21) having undergone a predetermined process is formed. A cobalt layer(24) is formed on the titanium layer. A titanium nitride layer(25) is formed on the cobalt layer. A heat treatment is performed on the resultant structure to transform the cobalt layer and the titanium layer into a cobalt silicide layer(27).