首页> 外国专利> Process for calibrating the temperature controlling device of a vertical gradient freeze crystal growing oven comprises taking into consideration correction offsets established during the calibration

Process for calibrating the temperature controlling device of a vertical gradient freeze crystal growing oven comprises taking into consideration correction offsets established during the calibration

机译:校准垂直梯度冷冻晶体生长炉的温度控制装置的方法包括考虑在校准期间建立的校正偏移

摘要

Process for calibrating the temperature control device of a vertical gradient freeze crystal growing oven comprises taking into consideration correction offsets determined by comparing the temperature differences between control temperature emitters and reference temperature emitters with the theoretical temperature differences prescribed for the oven. Process for calibrating the temperature controlling device of a vertical gradient freeze crystal growing oven comprises measuring the temperature at the height of the control temperature emitters (11, 12, 13) after passing through resistance heaters (8, 9, 10) using a reference temperature emitter (5), regulating the power of the resistance heaters to a required temperature value, determining the difference to the temperature of each control temperature emitter, stopping the calibration process after removing the control temperature emitters by comparing the temperature differences between the control temperature emitters and the reference temperature emitters with the theoretical temperature differences prescribed for the oven, and operating the oven taking into consideration correction offsets established during the calibration. An Independent claim is also included for a vertical gradient freeze crystal growing oven.
机译:校准垂直梯度冷冻晶体生长烤箱的温度控制装置的方法包括考虑通过将控制温度发射器和参考温度发射器之间的温度差与烤箱规定的理论温差进行比较而确定的校正偏移。用于校准垂直梯度冷冻晶体生长炉的温度控制装置的方法包括:在使用参考温度通过电阻加热器(8、9、10)之后,测量控制温度发射器(11、12、13)的高度处的温度。发射器(5),将电阻加热器的功率调节到所需的温度值,确定每个控制温度发射器的温度差,并通过比较控制温度发射器之间的温差来移除校准温度发射器后停止校准过程并为参考温度发射器提供烤箱规定的理论温差,并且在操作烤箱时要考虑到在校准期间建立的校正偏差。垂直梯度冷冻晶体生长炉也包含独立索赔。

著录项

  • 公开/公告号DE10246567C1

    专利类型

  • 公开/公告日2003-12-18

    原文格式PDF

  • 申请/专利权人 CRYSTAL GROWING SYSTEMS GMBH;

    申请/专利号DE2002146567

  • 发明设计人 MUEHE ANDREAS;

    申请日2002-10-05

  • 分类号F27B14/20;F27D17/00;

  • 国家 DE

  • 入库时间 2022-08-21 22:43:53

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