Process for repairing a defect of a light-influencing structure on a photolithographic mask in semiconductor component production comprises irradiating gallium ions in the region of a defect for implantation into the mask substrate

摘要

Process for repairing a defect of a light-influencing structure (1) on a photolithographic mask comprises irradiating gallium ions in the region of at least one defect for implantation into the mask substrate and/or for sputtering material from the substrate. An Independent claim is also included for a photolithographic mask used in the above process.