Production of an anti-fuse structure in a substrate used in integrated circuits comprises forming a conducting region and a non-conducting region in the substrate to form an edge of the conducting region, and depositing a dielectric layer

摘要

Production of an anti-fuse structure in a substrate comprises forming a conducting region (1) and a non-conducting region (2) in the substrate to form a common surface and an edge (3) of the conducting region, and depositing a dielectric layer (4) so that a part of this edge is covered. An Independent claim is also included for an anti-fuse structure produced by the above process.