Production of a hard mask on a semiconductor substrate used in the production of integrated circuits comprises forming a hard mask layer on the substrate, forming a photolacquer structure on the hard mask layer, and further processing

摘要

Production of a hard mask on a semiconductor substrate (1) comprises forming a hard mask layer (2) on the substrate, forming a photolacquer structure on the hard mask layer, inserting a dopant in the hard mask layer in the surface regions of the photolacquer structure, removing the photolacquer structure from the hard mask layer, and etching the hard mask layer using an etchant to open the hard mask layer only in the non-doped regions (31).