首页> 外国专利> Transistor amplifier connections with single-stroke or differential input with technology independent signal modulation compensation techniques

Transistor amplifier connections with single-stroke or differential input with technology independent signal modulation compensation techniques

机译:单冲程或差分输入的晶体管放大器连接,具有独立于技术的信号调制补偿技术

摘要

A compensating transistor (Q5) is connected in series with the collector of a main transistor (Q3), and a level shifted replica (Vin + V1) of an input signal (Vin) is applied to the base of the compensating transistor (Q5) to maintain a constant voltage difference between the base and collector of the main transistor (Q3) and compensate for base width modulation DELTA Vce. A voltage-controlled current source (S1) is responsive to the input signal (Vin) and applies a compensating current DELTA Iload which is equal and opposite to the load current variation caused by a change ( DELTA Vin) in the input voltage (Vin) to the emitter of the main transistor (Q3) to compensate for load current modulation DELTA Vbe. Alternatively, the compensating current can be applied to the junction of the base of the main transistor (Q3) and the emitter of pre-distortion transistor (Q4) which has a base connected to receive the input signal (Vin). Another compensating transistor (Q12) applies a current ( DELTA Ib) which is equal and opposite to a non-linear base current variation to the emitter or collector of the main transistor (Q3) to compensate for current gain modulation DELTA Ib. The modulation compensation arrangements are applicable to common-collector, common-base and common emitter amplifiers in single-ended and differential configurations, and to substantially all bipolar and field-effect transistor technologies. IMAGE
机译:补偿晶体管(Q5)与主晶体管(Q3)的集电极串联连接,并且输入信号(Vin)的电平移位副本(Vin + V1)被施加到补偿晶体管(Q5)的基极为了保持主晶体管(Q3)的基极和集电极之间的电压差恒定,并补偿基极宽度调制ΔVce。压控电流源(S1)响应输入信号(Vin),并施加一个补偿电流DELTA Iload,该电流等于和相反由输入电压(Vin)的变化(DELTA Vin)引起的负载电流变化到主晶体管(Q3)的发射极,以补偿负载电流调制ΔVbe。替代地,可以将补偿电流施加到主晶体管(Q3)的基极和预失真晶体管(Q4)的发射极的结,该预失真晶体管的基极被连接以接收输入信号(Vin)。另一个补偿晶体管(Q12)向主晶体管(Q3)的发射极或集电极施加与非线性基极电流变化相等且相反的电流(ΔIb),以补偿电流增益调制ΔIb。调制补偿装置适用于单端和差分配置的共集电极,共基极和共射极放大器,以及几乎所有双极和场效应晶体管技术。 <图像>

著录项

  • 公开/公告号DE69333380D1

    专利类型

  • 公开/公告日2004-02-19

    原文格式PDF

  • 申请/专利权人 TELASIC COMMUNICATIONS INC.;

    申请/专利号DE19936033380T

  • 发明设计人 LINDER LLOYD F.;BIRDSALL DWIGHT D.;

    申请日1993-04-15

  • 分类号H03F1/32;H03F3/50;

  • 国家 DE

  • 入库时间 2022-08-21 22:41:12

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