首页> 外国专利> Rapid heat treatment device for heat treatment of a micro-electronic substrate by infrared radiation includes cold-walled infrared halogen lamps arranged in a cold walled reaction chamber

Rapid heat treatment device for heat treatment of a micro-electronic substrate by infrared radiation includes cold-walled infrared halogen lamps arranged in a cold walled reaction chamber

机译:用于通过红外线辐射对微电子基板进行热处理的快速热处理装置,包括布置在冷壁反应室中的冷壁红外卤素灯。

摘要

Rapid heat treatment device includes cold-walled infrared halogen lamps arranged in a cold walled reaction chamber. A rapid heat treatment device comprises infrared halogen lamps (2) arranged in a reaction chamber with cold metal walls (12). Each lamp has a first tubular quartz envelope (8) concentric with an outer quartz envelope (9) which forms the outer wall of a channel (10) for the circulation of a cooling liquid transparent to infrared radiation, to form cold-walled lamps. The cooling liquid includes compounds with a halogen-saturated carbon chain or compounds with a halogen-saturated oxygen and carbon chain. Each lamp also includes an intermediate tubular casing (17), arranged to delimit a tubular space (18) with the first casing and to make up an internal wall for the circulation channel. The tubular space maintains the first casing at a temperature between 200 and 900 degreesC.
机译:快速热处理装置包括布置在冷壁反应室中的冷壁红外卤素灯。快速热处理装置包括布置在具有冷金属壁(12)的反应室中的红外卤素灯(2)。每个灯具有与外部石英外壳(9)同心的第一管状石英外壳(8),该外部石英外壳形成通道(10)的外壁,该通道用于使对红外辐射透明的冷却液循环以形成冷壁灯。冷却液包括具有卤素饱和的碳链的化合物或具有卤素饱和的氧和碳链的化合物。每个灯还包括中间管状壳体(17),该中间管状壳体布置成与第一壳体界定管状空间(18)并构成用于循环通道的内壁。管状空间将第一壳体保持在200至900℃之间的温度。

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