Active layer formation method in e.g. silicon germanium on insulator structure, involves supplying energy to relax elastic strains in strained layer of wafer, and removing portion of wafer on opposite side of relaxed strained layer

摘要

A region of perturbation (3) is formed on a supporting substrate (1) of wafer containing a strained layer, at a defined depth to form structural perturbations. Energy is supplied to cause relaxation of elastic strains in the strained layer. A portion of the wafer on the opposite side of the relaxed strained layer (2'), is removed such that the remaining portion of wafer constitutes the active layer. Independent claims are also included for the following: (1) wafer; and (2) semiconductor structure.