Method of this invention all photoresists oh is applicable with singing process, especially, the high dose ion implantation silicon substrate, baking is executed with the hot hot plate, the photoresist which is hardened oh popping dying, is removed quickly at singing stage, oh the singing throughput improves by shortening the time when it depends oh on the singing process of the wafer epochally, former equipment that way it is enabled. Method of this invention includes, putting the silicon substrate on the hot plate in pressure state of 10 tall or more, with until gas process step and the photoresist most is removed in vacuum stage and the reaction chamber which make a vacuum state where it is stabilized when insaichiyubekingu stage and the silicon substrate which execute the between baking of specified time have been placed on the hot plate generates the plasma oh the singing stage which it sorts fills the reaction gas.
展开▼
