Single photon detection system and avalanche photodiodes for photon counting applications

摘要

Particularly useful for single photon detection applications, the APD improved structure, operation and method with improved APD is provided. The absorption region, a control region, APD and a multiplication region is provided. Multiplication region has about 1 κ value. In one embodiment, multiplication region comprises an InP layer doped. Field control layer is designed to produce a reduction of the electric field is equal to minus 5V / μm or breakdown field plus a multiplication region. While applying a voltage to the APD, to induce the multiplication region an electric field exceeding the breakdown electric field control region is shielded by the absorption region, the method, to prevent excessive noise.