首页>
外国专利>
FERRITE SUBSTRATE FOR THIN-FILM INDUCTOR, THIN-FILM COMMON-MODE FILTER USING THE SUBSTRATE, THIN-FILM COMMON-MODE FILTER ARRAY USING THE SUBSTRATE, AND METHOD FOR PRODUCING THE SUBSTRATE
FERRITE SUBSTRATE FOR THIN-FILM INDUCTOR, THIN-FILM COMMON-MODE FILTER USING THE SUBSTRATE, THIN-FILM COMMON-MODE FILTER ARRAY USING THE SUBSTRATE, AND METHOD FOR PRODUCING THE SUBSTRATE
PROBLEM TO BE SOLVED: To provide a ferrite substrate which is used for a thin-film inductor, exhibits high surface insulation resistance, little degradation, and high mechanical strength, and enables a terminal to be precisely and easily formed on the substrate surface; a thin-film common-mode filter using the substrate; a thin-film common-mode filter array using the substrate; and a method for producing the substrate.;SOLUTION: The ferrite substrate is prepared by compounding raw materials so as to give a composition comprised of 40-55 mol% Fe2O3, 5-35 mol% NiO, 10-40 mol% ZnO, and 150-750 ppm Bi2O3 or comprised of 40-55 mol% Fe2O3, 5-35 mol% NiO, 10-40 mol% ZnO, 5-10 mol% CuO, and 0.5-2 mol% MnO2 and subjecting the composition to molding, firing, and HIP.;COPYRIGHT: (C)2005,JPO&NCIPI
展开▼
机译：解决的问题：提供一种用于薄膜电感器的铁氧体基板，该铁氧体基板具有高的表面绝缘电阻，几乎不劣化和较高的机械强度，并且能够在基板表面上精确且容易地形成端子。使用该基板的薄膜共模滤波器;使用该基板的薄膜共模滤波器阵列;解决方案：通过混合原材料制备铁氧体衬底，使其组成为40-55 mol％Fe 2 O 3 ，5-35摩尔％NiO，10-40摩尔％ZnO和150-750 ppm Bi 2 O 3 或由40-55摩尔％Fe 2 O 3 ，5-35 mol％NiO，10-40 mol％ZnO，5-10 mol％CuO和0.5-2 mol％MnO 2 ，然后对该组合物进行成型，烧制和HIP 。;版权所有：（C）2005，JPO＆NCIPI
展开▼
