首页> 外国专利> IDDQ testing of CMOS mixed-signal integrated circuits

IDDQ testing of CMOS mixed-signal integrated circuits

机译:CMOS混合信号集成电路的IDDQ测试

摘要

A method of enhancing the testability of CMOS ICs, in one or more of the following ways: by minimizing performance degradation of CMOS ICs under test; by eliminating the need for external voltage and current references; by inducing responsive effects; and by minimizing the amount of space used to integrate on-chip testing devices. The device is a CMOS IC comprising a fixed supply voltage, a negative power supply voltage, at least one pair of electrical nodes, and at least one fault-injector. The fault-injector is a transistor comprising a gate for operating in on-state and off-state conditions, and a source node and a drain node for completing an electrical path between a pair of electrical nodes. In an off-state condition, the fault-injector does not interfere with the normal operations of the circuit. However, in an on-state condition, it induces various responsive effects by varying the level of resistance.
机译:一种通过以下一种或多种方式增强CMOS IC的可测试性的方法:通过最小化被测CMOS IC的性能下降;通过消除对外部电压和电流基准的需求;通过诱发反应性作用;并且通过最小化用于集成片上测试设备的空间量。该设备是CMOS IC,包括固定电源电压,负电源电压,至少一对电节点和至少一个故障注入器。故障注入器是晶体管,其包括用于在导通状态和截止状态条件下操作的栅极以及用于完成一对电节点之间的电路径的源极节点和漏极节点。在断开状态下,故障注入器不会干扰电路的正常运行。但是,在导通状态下,它会通过改变电阻级别来诱发各种响应效果。

著录项

  • 公开/公告号US6930500B2

    专利类型

  • 公开/公告日2005-08-16

    原文格式PDF

  • 申请/专利权人 ASHOK SRIVASTAVA;

    申请/专利号US20040858189

  • 发明设计人 ASHOK SRIVASTAVA;

    申请日2004-06-01

  • 分类号G01R31/02;

  • 国家 US

  • 入库时间 2022-08-21 22:21:54

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号