PZT (111) texture through Ir texture improvement

摘要

The present invention relates to a kind of formation ferroelectric condensers to have (111) PZT textures. This method is that one kind is convenient for preferential (111) texture in the electrode layer subsequently formed including forming smooth bottom electrode diffusion barrier layer. (111) bottom electrode layer quality ratio is conducive to cover PZT layers on high quality (111) texture, and the various capacitors for improving the bit-to-bit polarization quantity of electric charge uniformity are persistently reduced as the size of ferroelectric condenser.